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Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).

PolandTenders notice for Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).. The reference ID of the tender is 120605492 and it is closing on 07 Jul 2025.

Tender Details

  • Country: Poland
  • Summary: Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).
  • PLT Ref No: 120605492
  • Deadline: 07 Jul 2025
  • Financier: Self Financed
  • Purchaser Ownership: Government
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: 370169-2025
  • Purchaser's Detail:
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  • Description:
  • Please Scroll Down for the English Version
    The subject of the order is "Delivery of two identical advanced surface grinding systems designed specifically for grinding semiconductor substrates, such as gallium nitride (GAN) and silicon carbide (sic)."
    Purchase of two identicalgrinder:
    Requirements for the specification of grinders
    â€Ē grinder designed specifically for grinding semiconductor wafers, such as gallium nitride (GAN) and silicon carbide (sic).
    â€Ē single -shaped grinder for processing waffles individually
    â€Ē Possibility of processing waffles with a diameter from 25 mm to 150mm
    â€Ē Possibility to use grinding discs from any supplier
    Dimensions of the grinder:
    â€Ē base area: less than: 1.5 m (width) x 2.2 m (depth) x 2.5 m (height)
    â€Ē Weight: less than: 5 tons
    sanding platform:
    â€Ē spindle stiffness: at least 1 ym/500 n
    â€Ē rated moment: 22 nm
    â€Ē regulationsloping of the grinding disc in the axis with 3-point support
    â€Ē feed speed: 5 mm/s
    â€Ē cutting: 0.01 (10.0) Ξm/s
    â€Ē resolution for the axis with: 0.01 Ξm
    measuring the thickness of wafer:
    â€Ē The measuring function of the thickness of the processed element in real time
    working table:
    â€Ē rotational speed: minimum 300 speed: rpmSupported sizes of workpiece, available working tables:
    0 25.4 mm
    0 49 mm
    0 50.8 mm
    0 101.6 mm
    â€Ē porous material: Ceramics
    grinding disc:

    â€Ē Diameter of the grinding disc: from 200 mm to 300 mm
    â€Ē rotational speed of the disc: minimum 2500 rpm.SZL ...
  • Documents:

 Tender Notice

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Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic). - Poland Tender

The INSTITUTE OF HIGH PRESSURES OF THE POLISH ACADEMY OF SCIENCES, a Government sector organization in Poland, has announced a new tender for Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).. This tender is published on PolandTenders under PLT Ref No: 120605492 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-07-07.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.

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